Program-state-dependent recovery effect in 3D NAND flash following total ionizing dose irradiation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0314676
Affiliations:
3
Authors:
5
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Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
2.000000
 0.40
Sun Yat-sen University (SYSU), China
1.500000
 0.30
China Southern Power Grid Co., Ltd. (CSG), China
1.500000
 0.30
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