Correlation of recombination dynamics with structural defects in 4H–SiC epitaxial wafers revealed by TRPL

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0314900
Affiliations:
2
Authors:
7
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Institutions Authors Share
National Taiwan University of Science and Technology (NTUST), Taiwan
5.000000
 0.71
Kyushu University, Japan
2.000000
 0.29
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