Study on the single-event burnout mechanism of β-Ga2O3 heterojunction diodes under heavy-ion irradiation

Journal:

Applied Physics Letters

Published:

2026-01-19

DOI:

10.1063/5.0314929

Affiliations:

4

Authors:

9

Go to article

Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	4.000000	0.44
Northwest Institute of Nuclear Technology (NINT), China	3.000000	0.33
Xidian University, China	1.000000	0.11
Xiangtan University (XTU), China	1.000000	0.11

Interested in Electronics, Sensors and Digital Hardware?