A comprehensive investigation of the underlying mechanism for total-ionizing-dose effects in a-InGaZnO TFTs with varied channel thicknesses

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0314987
Affiliations:
3
Authors:
12
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Institutions Authors Share
Nanjing University of Posts and Telecommunications (NUPT), China
7.000000
 0.58
Southeast University (SEU), China
3.000000
 0.25
Guizhou Normal University (GZNU), China
2.000000
 0.17
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