Evaluation of Si thin film formed from Si0.7Ge0.3/Si/Si0.7Ge0.3-stacked layers with CF4/H2 plasma for Si-nanosheet formation toward GAA transistor application
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0315151
- Affiliations:
- 3
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Nagoya University, Japan | 0.78 | |
| Innovations for High Performance Microelectronics (IHP), Germany | 0.22 |