High mobility quaternary AlGaScN/GaN heterostructures grown by metalorganic chemical vapor deposition

Journal:

Applied Physics Letters

Published:

2026-03-16

DOI:

10.1063/5.0315491

Affiliations:

4

Authors:

11

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Institutions	Authors	Share
University of California, Santa Barbara (UCSB), United States of America (USA)	9.000000	0.82
Seoul Semiconductor, South Korea	1.000000	0.09
King Abdulaziz City for Science and Technology (KACST), Saudi Arabia	1.000000	0.09

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