High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0315800
Affiliations:
4
Authors:
18
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Institutions Authors Share
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, PKU, China
15.000000
15.000000
 0.83
MOE Key Laboratory of Optoelectronics Technology, BJUT, China
1.000000
 0.06
Compound Semiconductor (Xiamen) Technology (CSMH), China
1.000000
 0.06
Collaborative Innovation Center of Quantum Matter (CICQM), China
1.000000
 0.06
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