Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0315801
Affiliations:
5
Authors:
13
Go to article
Institutions Authors Share
Peking University (PKU), China
5.000000
 0.38
School of Electronic Science and Engineering, NJU, China
3.000000
 0.23
Beijing University of Technology (BJUT), China
2.000000
 0.15
School of Physics, PKU, China
2.000000
 0.15
The Hong Kong University of Science and Technology (HKUST), China
1.000000
 0.08
Interested in Nanotechnology?