Investigation of temperature-dependent oxide capacitance in paraelectric monoclinic doped HfO2/SiO2 gate stacks implemented on 4H-SiC

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0315887
Affiliations:
5
Authors:
18
Go to article
Institutions Authors Share
The University of Warwick (Warwick), United Kingdom (UK)
13.000000
13.000000
 0.72
University of Naples Federico II (UNINA), Italy
3.000000
 0.17
Dynax Semiconductor Inc., China
2.000000
 0.11
Interested in Macromolecular and Materials Chemistry?