Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures

Journal:

Applied Physics Letters

Published:

2026-02-16

DOI:

10.1063/5.0315888

Affiliations:

3

Authors:

7

Go to article

Institutions	Authors	Share
University at Buffalo, The State University of New York (SUNY UB), United States of America (USA)	3.000000	0.43
Massachusetts Institute of Technology (MIT), United States of America (USA)	2.000000	0.29
Rice University, United States of America (USA)	2.000000	0.29

Interested in Nanotechnology?