Effects of pre-deposition annealing prior to gate insulator deposition in planar AlGaN/GaN MIS-HEMT with a thin AlGaN barrier layer
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0316094
- Affiliations:
- 2
- Authors:
- 4
| Institutions | Authors | Share |
|---|---|---|
| Nagoya Institute of Technology (NITech), Japan | 0.50 | |
| Mitsubishi Electric, Japan | 0.50 |