Structural and electrical characterization of homoepitaxial (102) b-Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and emission microscopy

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0316096
Affiliations:
1
Authors:
7
Go to article
Institutions Authors Share
Novel Crystal Technology, Inc., Japan
7.000000
 1.00
Interested in Macromolecular and Materials Chemistry?