In situ XRD study of strain evolution in AlGaN/GaN HEMT at high temperatures up to 1000 °C

Journal:

Applied Physics Letters

Published:

2026-03-16

DOI:

10.1063/5.0316124

Affiliations:

4

Authors:

9

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Institutions	Authors	Share
The University of Utah (Utah), United States of America (USA)	9.000000	1.00

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