A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode

Journal:

Applied Physics Letters

Published:

2026-03-16

DOI:

10.1063/5.0316161

Affiliations:

3

Authors:

14

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Institutions	Authors	Share
Xidian University, China	7.500000	0.54
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	6.500000	0.46

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