Low-resistance graded AlGaN contact to high Al-content AlGaN PolFET grown by ammonia molecular beam epitaxy
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0317039
- Affiliations:
- 3
- Authors:
- 4
| Institutions | Authors | Share |
|---|---|---|
| University of California, Santa Barbara (UCSB), United States of America (USA) | 0.50 | |
| The Ohio State University (OSU), United States of America (USA) | 0.50 |