Fully optical switching memory based on an oxidized GQD–FeOx heterojunction with 106 negative photoconductance ratio

Journal:

Applied Physics Letters

Published:

2026-03-02

DOI:

10.1063/5.0317298

Affiliations:

4

Authors:

10

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Institutions	Authors	Share
Zunyi Normal College (ZYNC), China	4.000000	0.40
MOE Key Laboratory of Luminescence Analysis and Molecular Sensing, SWU, China	4.000000	0.40
State Key Laboratory of Structural Chemistry (SKLSC), FJIRSM CAS, China	1.000000	0.10
Xi'an Jiaotong University (XJTU), China	1.000000	0.10

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