Coherently grown AlN/GaN HEMT heterostructures on AlN buffer on SiC substrate—Impact of coherent growth on electrical and thermal characteristics

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0318670
Affiliations:
4
Authors:
8
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Institutions Authors Share
Temasek Laboratories@NTU (TL@NTU), Singapore
3.666667
 0.46
Nanyang Technological University (NTU), Singapore
2.333333
 0.29
National University of Singapore (NUS), Singapore
2.000000
 0.25
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