Enhanced thermoelectric properties of AgBi3S5 through grain boundary and band engineering via Te alloying and Cd doping

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0318774
Affiliations:
3
Authors:
8
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Institutions Authors Share
Hebei Provincial Key Laboratory of High-precision Computation and Application of Quantum Field Theory, HBU, China
5.500000
 0.69
Hebei University (HBU), China
2.000000
 0.25
Shijiazhuang University, China
0.500000
 0.06
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