Ferromagnetic insulating ground states in oxygen deficient La0.8Sr0.2CoO3−δ films induced by ionic liquid gating

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0318861
Affiliations:
3
Authors:
9
Go to article
Institutions Authors Share
Fujian Key Laboratory of Semiconductor Materials and Applications, XMU, China
6.000000
 0.67
State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), XMU, China
2.000000
 0.22
Capital Normal University (CNU), China
1.000000
 0.11
Interested in Materials Engineering?