Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0318911
Affiliations:
3
Authors:
8
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Institutions Authors Share
Guangxi University (GXU), China
7.666667
 0.96
State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structure, GXU, China
0.333333
 0.04
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