Ion irradiation defect engineering modulates thermal transport in MoS2/Si heterostructure

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0319160
Affiliations:
2
Authors:
3
Institutions Authors Share
Jiangsu University (JSU), China
2.500000
0.83
Texas A&M University (TAMU), United States of America (USA)
0.500000
0.17