Investigation of the RF performance degradation in GaN HEMTs associated with the kink effect
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0319865
- Affiliations:
- 2
- Authors:
- 10
| Institutions | Authors | Share |
|---|---|---|
| Institute of Microelectronics (IME), CAS, China | 0.50 | |
| University of Chinese Academy of Sciences (UCAS), China | 0.50 |