Atomic layer etching-enabled interface engineering for reduced subthreshold swing and improved uniformity in p-channel GaN MOSFETs

Journal:

Applied Physics Letters

Published:

2026-04-13

DOI:

10.1063/5.0319913

Affiliations:

1

Authors:

14

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Institutions	Authors	Share
King Abdullah University of Science and Technology (KAUST), Saudi Arabia	14.000000 14.000000	1.00

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