Large spin Hall effect in 300 °C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0320146
Affiliations:
2
Authors:
6
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Institutions Authors Share
Institute of Science Tokyo (Science Tokyo), Japan
4.000000
 0.67
Samsung Japan, Japan
2.000000
 0.33
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