Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0320207
Affiliations:
2
Authors:
4
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Institutions Authors Share
Sogang University, South Korea
2.000000
 0.50
Seoul National University (SNU), South Korea
2.000000
 0.50
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