The origin of dynamic on-resistance instability in GaN hybrid drain-gate injection transistors under hard-switching conditions
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0320754
- Affiliations:
- 2
- Authors:
- 7
| Institutions | Authors | Share |
|---|---|---|
| Tiangong University (TGU), China | 1.00 |