Low-damage p-GaN surface for Ohmic contact after passivation layer removal by atomic layer etching

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0320800
Affiliations:
3
Authors:
11
Go to article
Institutions Authors Share
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China
5.833333
 0.53
University of Science and Technology of China (USTC), China
5.166667
 0.47
Interested in Atomic, Molecular and Optical Physics?