Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer

Journal:

Applied Physics Letters

Published:

2026-04-13

DOI:

10.1063/5.0321156

Affiliations:

4

Authors:

10

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Institutions	Authors	Share
Korea Advanced Institute of Science and Technology (KAIST), South Korea	5.000000	0.50
Korea Aerospace University (KAU), South Korea	4.000000	0.40
Korea Electrotechnology Research Institute (KERI), South Korea	1.000000	0.10

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