Reduction of carbon impurities in GaN grown by MOCVD using an NH3-plasma source

Journal:

Applied Physics Letters

Published:

2026-03-02

DOI:

10.1063/5.0322108

Affiliations:

4

Authors:

9

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Institutions	Authors	Share
Department of Electronics and Manufacturing (DELMA), AIST, Japan	7.500000	0.83
Tokyo Electron Limited (TEL), Japan	1.500000	0.17

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