Investigation of AlN back barrier/GaN HEMTs with ultra-thin GaN channel for high-frequency and high-voltage applications

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0322145
Affiliations:
2
Authors:
12
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Institutions Authors Share
Xidian University, China
11.000000
11.000000
 0.92
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China
1.000000
 0.08
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