Achieving high photoelectric efficiency in an optimized vertical photoconductive device with 355 nm excitation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0323513
Affiliations:
3
Authors:
4
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Institutions Authors Share
National University of Defense Technology (NUDT), China
3.333333
 0.83
Nanhu Laser Laboratory, NUDT, China
0.666667
 0.17
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