MOCVD growth of p-GaN-gated N-polar GaN HEMT heterostructures

Journal:

Applied Physics Letters

Published:

2026-05-11

DOI:

10.1063/5.0323680

Affiliations:

1

Authors:

5

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Institutions	Authors	Share
University of California, Santa Barbara (UCSB), United States of America (USA)	5.000000	1.00

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