Effective lateral isolation for hydrogen-terminated diamond field-effect transistors via nitrogen ion implantation

Journal:

Applied Physics Letters

Published:

2026-05-25

DOI:

10.1063/5.0323938

Affiliations:

4

Authors:

5

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Institutions	Authors	Share
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan	2.000000	0.40
University of Tsukuba, Japan	1.000000	0.20
International Center for Young Scientists (ICYS), NIMS, Japan	1.000000	0.20
Research Center for Macromolecules and Biomaterials, NIMS, Japan	1.000000	0.20

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