Single-event robustness under pulsed voltage stress and gate degradation under negative gate bias in hybrid-drain gate injection transistors (HD-GITs)

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0324111
Affiliations:
3
Authors:
10
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Institutions Authors Share
Beihang University (BUAA), China
6.000000
 0.60
Zhejiang University of Technology (ZJUT), China
2.000000
 0.20
Yangtze Delta Region Institute of Tsinghua University, Zhejiang, China
2.000000
 0.20
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