Localized electrothermal annealing for rapid recovery of ambient degradation in indium oxide transistors via COMSOL simulations and experimental characterization

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0324275
Affiliations:
4
Authors:
14
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Institutions Authors Share
Jeonbuk National University (JBNU), South Korea
12.000000
12.000000
 0.86
University of Seoul (UOS), South Korea
1.000000
 0.07
Hongik University, South Korea
1.000000
 0.07
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