Low-temperature (600 °C) formation of Al2O3/β-Ga2O3 interface with low interface state density employing substrate-surface O3 treatment processes

Journal:

Applied Physics Letters

Published:

2026-05-04

DOI:

10.1063/5.0324499

Affiliations:

2

Authors:

4

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Institutions	Authors	Share
The University of Tokyo (UTokyo), Japan	4.000000	1.00

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