Probing the transitions between 2D and 3D states in InGaN/GaN quantum wells via admittance spectroscopy

Journal:

Applied Physics Letters

Published:

2026-04-27

DOI:

10.1063/5.0324742

Affiliations:

3

Authors:

7

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Institutions	Authors	Share
Dalian University of Technology (DUT), China	2.500000	0.36
The University of Hong Kong (HKU), China	2.500000	0.36
State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, China	2.000000	0.29

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