Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0325223
- Affiliations:
- 2
- Authors:
- 12
| Institutions | Authors | Share |
|---|---|---|
| Rice University, United States of America (USA) | 1.00 |