Vertically stacked double-channel tri-gate GaN HEMT and SBD with enhanced reverse conduction performance

Journal:

Applied Physics Letters

Published:

2026-05-11

DOI:

10.1063/5.0325323

Affiliations:

1

Authors:

5

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Institutions	Authors	Share
Swiss Federal Institute of Technology Lausanne (EPFL), Switzerland	5.000000	1.00

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