Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping

Journal:

Applied Physics Letters

Published:

2026-03-23

DOI:

10.1063/5.0325369

Affiliations:

6

Authors:

19

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Institutions	Authors	Share
CEA Laboratory of Electronics and Information Technology (LETI), France	6.000000	0.32
Laboratoire Ampère, France	4.000000	0.21
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), France	3.000000	0.16
Institute of Electronics, Microelectronics and Nanotechnology (IEMN), France	3.000000	0.16
Lyon Nanotechnology Institute (INL), France	2.000000	0.11
Laboratoire Nanotechnologies Nanosystèmes (LN2), Canada	1.000000	0.05

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