Ammonia source molecular beam epitaxy of ScAlN/GaN HEMTs with AlN exclusion layers

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0325373
Affiliations:
1
Authors:
6
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Institutions Authors Share
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), France
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