Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0325429
Affiliations:
1
Authors:
3
Go to article
Institutions Authors Share
University of Erlangen-Nuremberg (FAU), Germany
3.000000
 1.00
Interested in Atomic, Molecular and Optical Physics?