Gate-length scaling of AlGaN/GaN HEMTs for cryogenic low-noise operation
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0325467
- Affiliations:
- 2
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Chalmers University of Technology (Chalmers), Sweden | 1.00 |