Top-gated multifunctional MoS2/silicon-on-insulator heterojunction

Journal:

Applied Physics Letters

Published:

2026-05-25

DOI:

10.1063/5.0325876

Affiliations:

3

Authors:

11

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Institutions	Authors	Share
Huazhong University of Science and Technology (HUST), China	6.500000	0.59
State Key Laboratory of Material Processing and Die and Mould Technology, HUST, China	4.500000	0.41

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