Single-transistor spectrometer via Burstein–Moss absorption edge modulation in compound semiconductors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0326904
Affiliations:
2
Authors:
10
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Institutions Authors Share
School of Microelectronics, Fudan University, China
9.000000
 0.90
Jiashan Fudan Institute, China
1.000000
 0.10
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