MoS2 field-effect transistors gated with quasi-1D metallic TaSe3 crystal
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0326982
- Affiliations:
- 4
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Harbin Institute of Technology (HIT), China | 1.00 |
| Institutions | Authors | Share |
|---|---|---|
| Harbin Institute of Technology (HIT), China | 1.00 |