Study on the synergistic effect of electrical bias and proton irradiation on the electrical performance degradation of β-Ga2O3 Schottky barrier diodes

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0327011
Affiliations:
2
Authors:
10
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Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
8.500000
 0.85
University of Chinese Academy of Sciences (UCAS), China
1.500000
 0.15
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