Influence of dislocation clusters on homoepitaxial layers grown by halide vapor phase epitaxy (001) β-Ga2O3 investigated by synchrotron x-ray topography and scanning transmission electron microscopy

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0327068
Affiliations:
1
Authors:
6
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Institutions Authors Share
Novel Crystal Technology, Inc., Japan
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