Impact of bond rupture dynamics at polar and non-polar interfaces on time-dependent dielectric breakdown (TDDB) of GaN FinFETs

Journal:

Applied Physics Letters

Published:

2026-03-30

DOI:

10.1063/5.0327282

Affiliations:

1

Authors:

7

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Institutions	Authors	Share
South China University of Technology (SCUT), China	7.000000	1.00

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