Effects of gate-electrode plasmons on remote phonon scattering in thin-film transistor with perovskite barium titanate as high-k gate dielectric

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0329462
Affiliations:
2
Authors:
5
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Institutions Authors Share
The University of Hong Kong (HKU), China
3.000000
 0.60
Huazhong University of Science and Technology (HUST), China
2.000000
 0.40
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